FEATURES
● Drives two IGBT/MOSFET power devices
● High side channel fully operates up to +600V
● Gate drive supplies from 10V to 20V per channel
● Under-voltage lockout
● Built-in dead-time protection: 0.5us
● IO+/-: 270/600mA, large sourcing current to bypass miller effect
● Shoot-through (cross-conduction) protection
● 3.3V/5V/15V input logic compatible
● Matched propagation delays for all channels
● Matched dead time
● High side output in phase with HIN input
● Low side output out of phase with LIN (PT5608)
● Low side output in phase with LIN (PT5608A)
● Tolerant to negative transient voltage, immunity of dv/dt up to 50V/ns
● Low di/dt gate drive for better noised immunity
● -40°C to 125°C operating range
● SOP8L package